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Journal article

Exciton ionization in multilayer transition-metal dichalcogenides

From

Aalborg University1

Center for Atomic-scale Materials Design, Centers, Technical University of Denmark2

Center for Nanostructured Graphene, Centers, Technical University of Denmark3

Department of Physics, Technical University of Denmark4

University of Delaware5

Photodetectors and solar cells based on materials with strongly bound excitons rely crucially on field-assisted exciton ionization. We study the ionization process in multilayer transition-metal dichalcogenides (TMDs) within the Mott-Wannier model incorporating fully the pronounced anisotropy of these materials.

Using complex scaling, we show that the field-dependence of the ionization process is strongly dependent on orientation. Also, we find that direct and indirect excitons behave qualitatively differently as a result of opposite effective anisotropy of these states. Based on first-principles material parameters, an analysis of several important TMDs reveals WSe2 and MoSe2 to be superior for applications relying on ionization of direct and indirect excitons, respectively.

Language: English
Publisher: IOP Publishing
Year: 2016
Pages: 073043
ISSN: 13672630
Types: Journal article
DOI: 10.1088/1367-2630/18/7/073043
ORCIDs: Latini, Simone and Thygesen, Kristian Sommer

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