Journal article
The influence of nitride thickness variations on the switching speed of MNOS memory transistors
In
I E E E Transactions on Electron Devices
—
1978, Volume 25, Issue 11, pp. 1328-1331
Abstract
The influence of nitride thickness variations on the switching speed of MNOS memory transistors is examined. The switching time constant is calculated as a function of the nitride thickness using a model of modified Fowler-Nordheim injection. The calculated characteristics compare well with measured characteristics and show a strong dependence on the nitride thickness.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 1978 |
| Pages: | 1328-1331 |
| ISSN: | 15579646 and 00189383 |
| Types: | Journal article |
| DOI: | 10.1109/T-ED.1978.19275 |
| ORCIDs: | Bruun, Erik |
