Journal article
Ge-nanoclusters were formed by electron-beam irradiation in Ge-doped silica-on-silicon thin films. The size and density of the clusters can be controlled by the irradiation intensity and time
In
Electronics Letters
—
2006, Volume 42, Issue 9, pp. 532-534
From
Fibers & Nonlinear Optics, Department of Photonics Engineering, Technical University of Denmark1
Department of Photonics Engineering, Technical University of Denmark2
Department of Management Engineering, Technical University of Denmark3
Center for Nanoteknologi, Centers, Technical University of Denmark4
Abstract
Ge-nanoclusters were formed by electron-beam irradiation in Ge-doped silica-on-silicon thin films. The size and density of the clusters can be controlled by the irradiation intensity and time.
| Language: | English |
|---|---|
| Year: | 2006 |
| Pages: | 532-534 |
| ISSN: | 1350911x and 00135194 |
| Types: | Journal article |
| DOI: | 10.1049/el:20060399 |
| ORCIDs: | Ou, Haiyan , Rottwitt, Karsten , Grumsen, Flemming Bjerg and Horsewell, Andy |
