Journal article
High resolution 100 kV electron beam lithography in SU-8
High resolution 100 kV electron beam lithography in thin layers of the negative resist SU-8 is demonstrated. Sub-30 nm lines with a pitch down to 300 nm are written in 100 nm thick SU-8. Two reactive ion etch processes are developed in order to transfer the SU-8 structures into a silicon substrate, a Soft O-2-Plasma process to remove SU-8 residues on the silicon surface after development and a highly anisotropic SF6/O-2/CHF3 based process to transfer the pattern into a silicon substrate, with selectivity between silicon and SU-8 of approximately 2. 30 nm lines patterned in SU-8 are successfully transferred into a silicon substrate, which is used as a stamp in a nanoimprint lithography process to fabricate a nanochannel device for DNA stretching experiments.
Language: | English |
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Year: | 2006 |
Pages: | 1609-1612 |
ISSN: | 18735568 and 01679317 |
Types: | Journal article |
DOI: | 10.1016/j.mee.2006.01.142 |
ORCIDs: | Bøggild, Peter and Kristensen, Anders |