Conference paper
An accurate and simple large signal model of HEMT
A large-signal model of discrete HEMTs (high-electron-mobility transistors) has been developed. It is simple and suitable for SPICE simulation of hybrid digital ICs. The model parameters are extracted by using computer programs and data provided by the manufacturer. Based on this model, a hybrid pulse inverter with rise and fall times of 20 ps and 29 ps at 5 Gb/s, respectively, has been built.
The accuracy of the model has been verified by obtaining good agreement between the measured and simulated waveforms of the inverter
Language: | English |
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Publisher: | IEEE |
Year: | 1989 |
Pages: | 463-466 |
Proceedings: | 1989 IEEE MTT-S International Microwave Symposium |
Types: | Conference paper |
DOI: | 10.1109/MWSYM.1989.38766 |
20 ps 29 ps 5 Gbit/s Circuit simulation Circuit testing Computational modeling Data mining HEMTs MESFETs Oscilloscopes Pulse inverters S-parameters SPICE SPICE simulation Scattering parameters computer programs digital integrated circuits fall times high electron mobility transistors high-electron-mobility transistors hybrid digital ICs hybrid pulse inverter large signal model microwave performance rise time semiconductor device models solid-state microwave devices waveforms