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Conference paper

An accurate and simple large signal model of HEMT

In Ieee Mtt-s International Microwave Symposium Digest — 1989, pp. 463-466
From

Department of Electrical Engineering, Technical University of Denmark

A large-signal model of discrete HEMTs (high-electron-mobility transistors) has been developed. It is simple and suitable for SPICE simulation of hybrid digital ICs. The model parameters are extracted by using computer programs and data provided by the manufacturer. Based on this model, a hybrid pulse inverter with rise and fall times of 20 ps and 29 ps at 5 Gb/s, respectively, has been built.

The accuracy of the model has been verified by obtaining good agreement between the measured and simulated waveforms of the inverter

Language: English
Publisher: IEEE
Year: 1989
Pages: 463-466
Proceedings: 1989 IEEE MTT-S International Microwave Symposium
Types: Conference paper
DOI: 10.1109/MWSYM.1989.38766

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