Journal article
Direct observation of amophization in load rate dependent nanoindentation studies of crystalline Si
Indira Gandhi Centre for Atomic Research, Materials Technology Division, , Kalpakkam 603102, India1
Indira Gandhi Centre for Atomic Research, Surface and Nanoscience Division, , Kalpakkam 603102, India2
National Chung Cheng University, Department of Mechanical Engineering, , Chia-Yi 62102, Taiwan3
National Cheng Kung University, Institute of Electro-Optical Science and Engineering, , Tainan 70101, Taiwan4
National Taiwan University, Center for Condensed Matter Sciences, , Taipei 106, Taiwan5
Academia Sinica, Institute of Atomic and Molecular Sciences, , Taipei 106, Taiwan6
Indentation at very low load rate showed region of constant volume with releasing load in crystalline (c-)Si, indicating a direct observation of liquidlike amorphous phase which is incompressible under pressure. Signature of amorphization is also confirmed from load dependent indentation study where increased amount of amorphized phase is made responsible for the increasing elastic recovery of the sample with increasing load.
Ex situ Raman study confirmed the presence of amorphous phase at the center of indentation. The molecular dynamic simulation has been employed to demonstrate that the effect of indentation velocities has a direct influence on c-Si during nanoindentation processes.
Language: | Undetermined |
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Publisher: | American Institute of Physics |
Year: | 2010 |
Pages: | 253113 |
ISSN: | 10773118 and 00036951 |
Types: | Journal article |
DOI: | 10.1063/1.3456380 |