Journal article
Determination of Shear Deformation Potentials from the Free-Carrier Piezobirefringence in Germanium and Silicon
The present investigations of the free-carrier piezobirefringence phenomenon verify that in n-type germanium and silicon as well as in p-type silicon this effect can be ascribed to intraband transitions of the carriers. It is demonstrated how a combined investigation of the low-stress and high-stress piezobirefringence in these materials provides a direct and independent method for determining deformation-potential constants.
For n-type germanium we obtain Ξu=18.0±0.5 eV, for n-type silicon Ξu=8.5±0.4 eV; for p-type silicon a rather crude analytical approximation yields b=-3.1 eV and d=-8.3 eV. Finally, experimental evidence is given to support the assumption, that in p-type germanium intraband transitions alone cannot account for the free-carrier piezobirefringence.
Language: | English |
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Year: | 1966 |
Pages: | 845-849 |
ISSN: | 15366065 and 0031899x |
Types: | Journal article |
DOI: | 10.1103/PhysRev.152.845 |