Conference paper
Plasmonic Modulator Using CMOS Compatible Material Platform
In this work, a design of ultra-compact plasmonic modulator is proposed and numerically analyzed. The device l ayout utilizes alternative plas monic materials such as tr ansparent conducting oxides and titanium nitride which potentially can be applied for CMOS compatible process. The modulation is obtained by varying the ca rrier concentration of th e transparent conducting oxide layer and exciting plasmonic resonance in the structure.
The analysis shows that an extinction ratio of 46 dB/μm can be achieved at the telecommunication wavelength. Proposed structure is particularly convenient for integration with existing insulator-metal-insu lator plasmonic waveguides as well as novel photonic/electronic hybrid circuits
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2014 |
| Pages: | 28-30 |
| Proceedings: | 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics |
| ISBN: | 1479932566 , 147993450X , 147993450x , 1479934526 , 9781479932566 , 9781479934508 and 9781479934522 |
| Types: | Conference paper |
| DOI: | 10.1109/MetaMaterials.2014.6948536 |
| ORCIDs: | Lavrinenko, Andrei |
CMOS compatible process CMOS integrated circuits CMOS-compatible material platform Educational institutions Modulation Optical waveguides Plasmons insulator-metal-insulator plasmonic waveguides modulation modulators photonic-electronic hybrid circuits plasmonic materials plasmonic resonance plasmonics telecommunication wavelength titanium nitride transparent conducting oxide layer transparent conducting oxides ultra-compact plasmonic modulator
