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Preprint article · Journal article

Room temperature formation of high-mobility two-dimensional electron gases at crystalline complex oxide interfaces

By Chen, Yunzhong1,2; Bovet, N.3; Kasama, Takeshi4; Gao, W.W.5; Yazdi, Sadegh4; Ma, C.5; Pryds, Nini1,2; Linderoth, Søren1

From

Department of Energy Conversion and Storage, Technical University of Denmark1

Electrofunctional materials, Department of Energy Conversion and Storage, Technical University of Denmark2

University of Copenhagen3

Center for Electron Nanoscopy, Technical University of Denmark4

Chinese Academy of Sciences5

Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO3 single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V−1 s−1 are achieved at this novel oxide interface.

Language: English
Year: 2014
Pages: 1462-1467
ISSN: 09481907 , 09359648 and 15214095
Types: Preprint article and Journal article
DOI: 10.1002/adma.201304634
ORCIDs: Chen, Yunzhong , Kasama, Takeshi , Pryds, Nini and Linderoth, Søren
Keywords

Alumina Complex oxide Oxide interfaces Strontium titanate Two-dimensional electron gases

Other keywords

alumina complex oxide cond-mat.mtrl-sci oxide interfaces strontium titanate two-dimensional electron gases two‐dimensional electron gases

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