Conference paper
Measurements with an ultrafast scanning tunnelling microscope on photoexcited semiconductor layers
Summary form only given. We demonstrate the use of a ultrafast scanning tunnelling microscopes (USTM) for detecting laser-induced field transients on semiconductor layers. In principle, the instrument can detect transient field changes thus far observed as far-field THz radiation in the near-field regime and resolve small signal sources.
For photoexcited low temperature (LT) GaAs we can explain the signal by a diffusion current driven by the laser-induced carrier density gradient
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 1998 |
| Pages: | 262-263 |
| Proceedings: | Conference on Lasers and Electro-Optics 1998 |
| ISBN: | 1557523390 and 9781557523396 |
| Types: | Conference paper |
| DOI: | 10.1109/CLEO.1998.676142 |
| ORCIDs: | Hvam, Jørn Märcher |
GaAs Gallium arsenide Instruments Microscopy Near-field radiation pattern Radiation detectors Semiconductor lasers Semiconductor radiation detectors Signal resolution Temperature Tunneling diffusion current far-field THz radiation gallium arsenide high-speed optical techniques laser beam effects laser-induced carrier density gradient laser-induced field transients detection near-field regime photoexcited low temperature GaAs photoexcited semiconductor layers scanning tunnelling microscopy semiconductor device testing semiconductor layers semiconductor thin films small signal sources transient field changes transients ultrafast scanning tunnelling microscope ultrafast scanning tunnelling microscopes
