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title:(Piezoresistance AND in AND Strained AND Silicon AND and AND Strained AND Silicon AND Germanium)

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1 Journal article · Conference paper

Piezoresistance in Strained Silicon and Strained Silicon Germanium

This paper presents experimental results of the piezoresistance in p-type tensile strained silicon and compressive strained silicon germanium grown by molecular beam epitaxy (MBE) on (001) silicon substrates. The piezoresistance decreases in a tensile strained layer and increases in a compressive

Year: 2006

Language: English

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2 Conference paper

Piezoresistance in Strained Silicon and Strained Silicon Germanium: Group IV Semiconductor Nanostructures

Year: 2007

Language: English

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3 Conference paper

Determination of piezoresistive properties of silicon and strained silicon germanium

Arnoldus, Morten Berg; Hedegaard, T.; Olesen, M.; Richter, Jacob; Thomsen, Erik Vilain

Proceedings of Eurosensors Xx — 2006, pp. 378-379

Year: 2006

Language: English

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