Journal article
Oxidation of hydrogen-passivated silicon surfaces by scanning near-field optical lithography using uncoated and aluminum-coated fiber probes
Optically induced oxidation of hydrogen-passivated silicon surfaces using a scanning near-field optical microscope was achieved with both uncoated and aluminum-coated fiber probes. Line scans on amorphous silicon using uncoated fiber probes display a three-peak profile after etching in potassium hydroxide.
Numerical simulations of the electromagnetic field around the probe-sample interaction region are used to explain the experimental observations. With an aluminum-coated fiber probe, lines of 35 nm in width were transferred into the amorphous silicon layer. (C) 1997 American Institute of Physics.
Language: | English |
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Publisher: | American Institute of Physics |
Year: | 1997 |
Pages: | 49-53 |
ISSN: | 10897550 and 00218979 |
Types: | Journal article |
DOI: | 10.1063/1.365847 |
ORCIDs: | Birkelund, Karen and Hvam, Jørn Märcher |