Journal article
Biexciton binding energy in ZnSe quantum wells and quantum wires
The biexciton binding energy E-XX is investigated in ZnSe/ZnMgSe quantum wells and quantum wires as a function of the lateral confinement by transient four-wave mixing. In the quantum wells one observes for decreasing well width a significant increase in the relative binding energy, saturating for well widths less than 8 nm.
In the quantum wires an increase of 30% is found in the smallest quantum wire structures compared to the corresponding quantum well value. A simple analytical model taking into account the quantum confinement in these low-dimensional systems is used to explain the experimentally observed dependence of the biexciton binding energies.
Language: | English |
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Publisher: | WILEY-VCH Verlag Berlin GmbH |
Year: | 2002 |
Pages: | 11-18 |
ISSN: | 15213951 and 03701972 |
Types: | Journal article |
DOI: | 10.1002/1521-3951(200205)231:1<11::AID-PSSB11>3.0.CO;2-V |
ORCIDs: | Hvam, Jørn Märcher |