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Conference paper

Influence of quasi-bound states on the carrier capture into quantum dots

In Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, 2002. Qels '02. Technical Digest — 2002, pp. 180-181
From

Optoelectronics, Department of Photonics Engineering, Technical University of Denmark1

Department of Photonics Engineering, Technical University of Denmark2

Modeling, Department of Photonics Engineering, Technical University of Denmark3

Laboratoire de Physique ENS4

An important characteristic of quantum dot (QD) materials is the timescale on which carriers are captured into the dots and relax to their ground state. The properties of devices based on QDs, such as lasers, thus rely on efficient carrier feeding to the active QD states. These processes are believed to be mediated by carrier-phonon and carrier-carrier interaction (Auger processes).

In systems of higher dimensionality, carrier relaxation via emission of LO (Longitudinal Optical) phonons is dominant. However, due to the discrete QD density of states, this process is often considered impossible unless the energy level separation equals the LO phonon energy, leading to a so-called phonon bottleneck.

This argument is based on the assumption that the carrier-LO phonon interaction is weak. It was shown that carriers in discrete QD states couple strongly to phonons and that the intersubband transition cannot be treated with Fermi's golden rule. Here, we extend the analysis to the coupling between carriers in quasi-bound continuum states and discrete QD states.

Language: English
Publisher: IEEE
Year: 2002
Pages: 180-181
Proceedings: 2002 Quantum Electronics and Laser Science Conference
ISBN: 1557527083 , 9781557527080 , 1557527075 and 9781557527073
Types: Conference paper
DOI: 10.1109/QELS.2002.1031281
ORCIDs: Mørk, Jesper

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