Journal article
High-resolution three-dimensional mapping of semiconductor dopant potentials
Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution.
Language: | English |
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Year: | 2007 |
Pages: | 2020-2023 |
ISSN: | 15306992 and 15306984 |
Types: | Journal article |
DOI: | 10.1021/nl070858n |