Journal article
Physical limits of semiconductor laser operation: A time-resolved analysis of catastrophic optical damage
Max-Born-Institute for Nonlinear Optics and Short Pulse Spectroscopy1
Optical Sensor Technology, Department of Photonics Engineering, Technical University of Denmark2
Department of Photonics Engineering, Technical University of Denmark3
Teraherts Technologies and Biophotonics, Department of Photonics Engineering, Technical University of Denmark4
Plasma Physics and Technology Programme, Risø National Laboratory for Sustainable Energy, Technical University of Denmark5
Risø National Laboratory for Sustainable Energy, Technical University of Denmark6
Cardiff University7
The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns time scale which is determined by the accumulation of excess energy absorbed from the optical output.
We identify regimes in which COD is avoided by the proper choice of operation parameters.
| Language: | English |
|---|---|
| Publisher: | American Institute of Physics |
| Year: | 2010 |
| ISSN: | 10773118 and 00036951 |
| Types: | Journal article |
| DOI: | 10.1063/1.3463039 |
| ORCIDs: | Larsen, Henning Engelbrecht , Andersen, Peter E. and Clausen, Sønnik |
