Journal article · Preprint article
Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO3
Electrofunctional materials, Department of Energy Conversion and Storage, Technical University of Denmark1
Department of Energy Conversion and Storage, Technical University of Denmark2
University of Copenhagen3
Max Planck Institute for Solid State Research4
Atomic Scale Materials Modelling, Department of Energy Conversion and Storage, Technical University of Denmark5
The two-dimensional metal forming at the interface between an oxide insulatorand SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces.
Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO3/SrTiO3 heterostructure, which exhibits both highelectron mobility exceeding 10, 000 cm2/V s and low carrier density on the order of ~1012 cm-2. Along with unambiguous Shubnikov-de Haasoscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional subbands.
This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.
Language: | English |
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Year: | 2016 |
Pages: | 096804 |
ISSN: | 10797114 and 00319007 |
Types: | Journal article and Preprint article |
DOI: | 10.1103/PhysRevLett.117.096804 |
ORCIDs: | Trier, Felix , Christensen, Dennis Valbjørn , von Soosten, Merlin , Bhowmik, Arghya , García Lastra, Juan Maria , Chen, Yunzhong , Pryds, Nini and 0000-0002-7879-976X |