Journal article
Second-harmonic imaging of semiconductor quantum dots
Resonant second-harmonic generation is observed at room temperature in reflection from self-assembled InAlGaAs quantum dots grown on a GaAs (001) substrate. The detected second-harmonic signal peaks at a pump wavelength of similar to 885 nm corresponding to the quantum-dot photoluminescence maximum.
In addition, the second-harmonic spectrum exhibits another smaller but well-pronounced peak at 765 nm not found in the linear experiments. We attribute this peak to the generation of second-harmonic radiation in the AlGaAs spacer layer enhanced by the local symmetry at the quantum-dot interface. We further observe that second-harmonic images of the quantum-dot surface structure show wavelength-dependent spatial variations.
Imaging at different wavelength is used to demonstrate second-harmonic generation from the semiconductor quantum dots. (C) 2000 American Institute of Physics.
Language: | English |
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Publisher: | American Institute of Physics |
Year: | 2000 |
Pages: | 806-808 |
ISSN: | 10773118 and 00036951 |
Types: | Journal article |
DOI: | 10.1063/1.1306634 |
ORCIDs: | Hvam, Jørn Märcher |