Journal article
On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate
We report on a study of lasers with an emission wavelength of about 1.5 μm and high temperature stability, synthesized on an InP (001) substrate. Self-organized InAs quantum dots capped with a thin GaAs layer are used as the active region of the laser. A quaternary InGaAsP solid solution with a band-gap width of 1.15 eV serves as the waveguide/matrix layer.
A high characteristic temperature of the threshold current, T0 = 205 K, is reached in the temperature range 20–50°C in ridge-waveguide laser diodes. A correlation between the values of T0 and the band-gap width of the waveguide layers is found.
Language: | English |
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Publisher: | Pleiades Publishing |
Year: | 2017 |
Pages: | 1332-1336 |
ISSN: | 10906479 and 10637826 |
Types: | Journal article |
DOI: | 10.1134/S1063782617100207 |
ORCIDs: | Semenova, Elizaveta and Yvind, Kresten |