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Journal article

Ultra-high-speed wavelength conversion in a silicon photonic chip

From

Ultra-fast Optical Communication, Department of Photonics Engineering, Technical University of Denmark1

Department of Photonics Engineering, Technical University of Denmark2

Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark3

Quantum and Laser Photonics, Department of Photonics Engineering, Technical University of Denmark4

We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton- absorption (TPA).

These results demonstrate that high-speed wavelength conversion is achievable in silicon chips with high data integrity and indicate that high-speed operation can be obtained at moderate power levels where nonlinear absorption due to TPA and free-carrier absorption (FCA) is not detrimental. This demonstration can potentially enable highspeed optical networks on a silicon photonic chip.

Language: English
Year: 2011
Pages: 19886-19894
ISSN: 10944087
Types: Journal article
DOI: 10.1364/OE.19.019886
ORCIDs: Hu, Hao , Galili, Michael , Pu, Minhao , Yvind, Kresten , Hvam, Jørn Märcher , Jeppesen, Palle and Oxenløwe, Leif Katsuo

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