Journal article
Excitonic optical nonlinearities and transport in the layered compound semiconductor GaSe
Dephasing and transient grating experiments in the direct excitonic absorption region of GaSe at low temperatures show that a fast relaxation within the one-dimensionally disordered excitonic band results in band filling being the dominant mechanism of the optical nonlinearity. Correspondingly, we observe a blueshift of the nonlinear signal with excitation density.
The temperature dependence of the exciton diffusion constant measured in directions parallel to the GaSe layer planes indicates that temperature-independent scattering (trapping) and scattering by acoustic phonons determine the exciton mobility at low temperatures.
Language: | English |
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Year: | 1995 |
Pages: | 16651-16659 |
ISSN: | 1550235x , 10980121 , 24699950 , 10953795 and 01631829 |
Types: | Journal article |
DOI: | 10.1103/PhysRevB.51.16651 |
ORCIDs: | Hvam, Jørn Märcher |