Photoluminescence studies of single InGaAs quantum dots

Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots is obtained by exciting and detecting the photoluminescence through a microscope objective which is located inside the cryostat.

Furthermore, e-beam lithography and mesa etching have been used to reduce the size of the detection area to a few hundred nanometers in diameter. These techniques allow us to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions.

Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice.