Journal article
Stacked Janus Device Concepts: Abrupt pn-Junctions and Cross-Plane Channels
Theoretical Nanoelectronics, Department of Micro- and Nanotechnology, Technical University of Denmark1
Department of Micro- and Nanotechnology, Technical University of Denmark2
Center for Nanostructured Graphene, Centers, Technical University of Denmark3
Synopsys Denmark ApS4
Department of Physics, Technical University of Denmark5
Computational Atomic-scale Materials Design, Department of Physics, Technical University of Denmark6
Janus transition metal dichalcogenides with a built-in structural cross-plane (cp) asymmetry have recently emerged as a new class of two-dimensional materials with a large cp dipole. Using first-principles calculations, and a tailored transport method, we demonstrate that stacking graphene and MoSSe Janus structures result in record high homogeneous doping of graphene and abrupt, atomically thin, cross-plane pn-junctions.
We show how graphene in contrast to metals can act as electrodes to Janus stacks without screening the cp dipole and predict a large photocurrent response dominated by a cp transport channel in a few-layer stacked device. The photocurrent is above that of a corresponding thin-film silicon device illustrating the great potential of Janus stacks, for example, in photovoltaic devices.
Language: | English |
---|---|
Publisher: | American Chemical Society |
Year: | 2018 |
Pages: | 7275-7281 |
ISSN: | 15306992 and 15306984 |
Types: | Journal article |
DOI: | 10.1021/acs.nanolett.8b03474 |
ORCIDs: | Gunst, Tue , Thygesen, Kristian Sommer and Brandbyge, Mads |
Graphene Janus MoSSe Optoelectronics SDG 7 - Affordable and Clean Energy Transition metal dichalcogenides Transport
graphene optoelectronics transition metal dichalcogenides transport