Journal article
On performance limitations and property correlations of Al-doped ZnO deposited by radio-frequency sputtering: Paper
Department of Micro- and Nanotechnology, Technical University of Denmark1
Silicon Microtechnology, Department of Micro- and Nanotechnology, Technical University of Denmark2
Technical University of Denmark3
Department of Energy Conversion and Storage, Technical University of Denmark4
Fundamental Electrochemistry, Department of Energy Conversion and Storage, Technical University of Denmark5
Department of Photonics Engineering, Technical University of Denmark6
Optical Microsensors and Micromaterials, Department of Photonics Engineering, Technical University of Denmark7
Department of Physics, Technical University of Denmark8
Surface Physics and Catalysis, Department of Physics, Technical University of Denmark9
The electrical properties of RF-sputtered Al-doped ZnO are often spatially inhomogeneous and strongly dependent on deposition parameters. In this work, we study the mechanisms that limit the minimum resistivity achievable under different deposition regimes. In a low- and intermediate-pressure regime, we find a generalized dependence of the electrical properties, grain size, texture, and Al content on compressive stress, regardless of sputtering pressure or position on the substrate.
In a high-pressure regime, a porous microstructure limits the achievable resistivity and causes it to increase over time as well. The primary cause of inhomogeneity in the electrical properties is identified as energetic particle bombardment. Inhomogeneity in oxygen content is also observed, but its effect on the electrical properties is small and limited to the carrier mobility.
Language: | English |
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Publisher: | IOP Publishing |
Year: | 2016 |
Pages: | 295101 |
ISSN: | 13616463 and 00223727 |
Types: | Journal article |
DOI: | 10.1088/0022-3727/49/29/295101 |
ORCIDs: | Crovetto, Andrea , Stamate, Eugen , Schou, Jørgen and Hansen, Ole |