Journal article
Interfacial potential in La1−xCaxMnO3∕SrTiO3:Nb junctions with different Ca contents
Abstract
Manganite-based heterojunctions La1−xCaxMnO3∕SrTiO3:Nb (0.05wt%) with x=0.1, 0.2, 0.33, 0.65, 0.75, and 1 have been fabricated, and the effects of Ca content on the interfacial potential are experimentally studied. Rectifying behavior well described by the Shockley equation is observed, and the interfacial potential (VD) is obtained for all of the junctions based on an analysis of the current-voltage characteristics.
The most remarkable result of the present work is the strong dependence of the interfacial potential on the carrier content of La1−xCaxMnO3 films: VD increases monotonously from ∼0.6to∼1.1V as x sweeps from 0.1 to 1. Influence on VD of the Fermi energy and Jahn–Teller effect in La1−xCaxMnO3 films are discussed.
| Language: | Undetermined |
|---|---|
| Publisher: | American Institute of Physics |
| Year: | 2008 |
| ISSN: | 10773118 and 00036951 |
| Types: | Journal article |
| DOI: | 10.1063/1.2841643 |
