Journal article
Growth andsegregationofGaAs–AlxIn1-xP core-shellnanowires
In
Journal of Crystal Growth
—
2010, Volume 312, Issue 10, pp. 1755-1760
Abstract
The development of a ternary AlxIn1−xP shell grown around GaAs nanowires epitaxially grown in the [1¯1¯1¯] direction has been studied. Morphology and composition of the shell have been studied using cross-sectional transmission electron microscopy (TEM). The side facets of the shell are found to develop dominant {11¯0} macro facets with small (approx. 5nm) {112¯} facets independent of the GaAs core side facets.
Phase segregation is observed as AlP developing from the {112¯} facets, while Al0.5In0.5P is found in the rest of the ternary shell.
| Language: | English |
|---|---|
| Year: | 2010 |
| Pages: | 1755-1760 |
| ISSN: | 18735002 and 00220248 |
| Types: | Journal article |
| DOI: | 10.1016/j.jcrysgro.2010.02.009 |
| ORCIDs: | Wagner, Jakob Birkedal |
