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Conference paper

Detection of Potential Induced Degradation in c-Si PV Panels Using Electrical Impedance Spectroscopy

In 43rd Ieee Photovoltaic Specialist Conference — 2016, pp. 1575-1579
From

Aalborg University1

EmaZys ApS2

Department of Photonics Engineering, Technical University of Denmark3

Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark4

This work, for the first time, investigates an Impedance Spectroscopy (IS) based method for detecting potential-induced degradation (PID) in crystalline silicon photovoltaic (c-Si PV) panels. The method has been experimentally tested on a set of panels that were confirmed to be affected by PID by using traditional current-voltage (I-V) characterization methods, as well as electroluminescence (EL) imaging.

The results confirm the effectiveness of the new approach to detect PID in PV panels.

Language: English
Publisher: IEEE
Year: 2016
Pages: 1575-1579
Proceedings: 42nd IEEE Photovoltaic Specialists Conference
ISBN: 1509027246 , 1509027254 , 9781509027248 and 9781509027255
Types: Conference paper
DOI: 10.1109/PVSC.2016.7749885
ORCIDs: Poulsen, Peter Behrensdorff and 0000-0002-8942-3784

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