Journal article
Field Effect in Graphene-Based van der Waals Heterostructures: Stacking Sequence Matters
Center for Nanostructured Graphene (CNG), Department of Micro- and Nanotechnology (DTU Nanotech)1
QuantumWise A/S, Fruebjergvej 3, Postbox 4, DK-2100 Copenhagen2
Campus UAB, 08193 Bellaterra3
Department of Micro- and Nanotechnology (DTU Nanotech)4
Stacked van der Waals (vdW) heterostructures where semiconducting two-dimensional (2D) materials are contacted by overlaid graphene electrodes enable atomically thin, flexible electronics. We use first-principles quantum transport simulations of graphene-contacted MoS2 devices to show how the transistor effect critically depends on the stacking configuration relative to the gate electrode.
We can trace this behavior to the stacking-dependent response of the contact region to the capacitive electric field induced by the gate. The contact resistance is a central parameter and our observation establishes an important design rule for ultrathin devices based on 2D atomic crystals.
Language: | English |
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Publisher: | American Chemical Society |
Year: | 2017 |
ISSN: | 15306992 and 15306984 |
Types: | Journal article |
DOI: | 10.1021/acs.nanolett.7b00473 |