Journal article
X-ray diffraction study of a semiconductor/electrolyte interface: n-GaAs(001)/H2SO4(:Cu)
We used X-ray diffraction to investigate the n-GaAs(001)/0.5M H2SO4 interface in-situ under potential control in a three-electrode, thin-layer electrochemical cell. The intensity of crystal truncation rods as a function of the electrode potential was recorded. A pronounced increase in surface roughness was proven by the strong decrease in the rod intensities with time at an electrode potential of -0.6 V versus SCE.
Surprisingly, this process could be partially reversed at more negative potentials (< -0.9 V versus SCE). Possible mechanisms explaining these observations are discussed. After the deposition of Cu from a 0.5M H2SO4/1mM CuSO4 solution, three-dimensional, epitaxially grown Cu islands with several degree mosaic spread were observed.
Language: | English |
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Year: | 1996 |
Pages: | 346-351 |
ISSN: | 18792758 and 00396028 |
Types: | Journal article |
DOI: | 10.1016/0039-6028(95)01158-7 |