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Conference paper

Above 8GHz Static T-Flip-Flop Operation using FT=22.9GHz GaAs MESFETs

In Proceedings of the 22nd European Microwave Conference — 1992, Volume 1, pp. 313-317

From

Technical University of Denmark¹

Department of Electromagnetic Systems, Technical University of Denmark²

Abstract

A static SCFL Toggle Flip-Flop GaAs IC having maximum operating frequency of Fdiv=8.25GHz has been designed using a commercially available GaAs MESFET foundry service. The average Ft for the present wafer is Ft=22.9GHz giving a very high Fdiv/Ft-ratio of Fdiv/Ft=0.36. In addition output voltage transition times of Tt(20%-80%)=35ps are obtained by implementation of a novel output driver design.

Language:	English
Publisher:	IEEE
Year:	1992
Pages:	313-317
Proceedings:	22nd European Microwave Conference
Types:	Conference paper
DOI:	10.1109/EUMA.1992.335686

Keywords

Driver circuits FETs Foundries Frequency conversion Gallium arsenide MESFET integrated circuits Master-slave Transconductance Transistors Voltage

Above 8GHz Static T-Flip-Flop Operation using FT=22.9GHz GaAs MESFETs

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Above 8GHz Static T-Flip-Flop Operation using FT=22.9GHz GaAs MESFETs

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