Journal article
A toroidal inductor integrated in a standard CMOS process
This paper presents a toroidal inductor integrated in a standard 0.13 um CMOS process. Finite-elements preliminary simulations are provided to prove the validity of the concept. In order to extract fundamental parameters by means of direct calculations, two different and well-known approaches are followed and the results are compared; this comparison provides useful guidelines for the design of the device.
A very simple PI model for low frequencies is derived from 1-port and 2-port measurements, and a good matching with general theory is observed. The coil exhibits an inductance between 0.9 nH and 1.1 nH up to 20 GHz (physical limit for the measurement equipment) and a quality factor approaching 10 at 15 GHz.
No self-resonance is observed within the measurement range.
Language: | English |
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Publisher: | Kluwer Academic Publishers |
Year: | 2007 |
Pages: | 39-46 |
Journal subtitle: | An International Journal |
ISSN: | 15731979 and 09251030 |
Types: | Journal article |
DOI: | 10.1007/s10470-006-9153-y |