Conference paper
Modelling CMOS radiation tolerance in the high-dose range
This paper refines a "four-lane" physical model for CMOS devices, first published in 1994. The growth of threshold voltage as a function of radiation dose in a very wide range of Complementary Metal-Oxide-Semiconductor (CMOS) devices, all the way from low (kilorad) to very high (gigarad) doses. The parameters of four LANE-LIKE OR CORRIDOR-LIKE REGIONS on the growth curve diagram are extracted.
The resulting FOUR-LANE CLASSIFICATION is useful in selecting CMOS technologies and offers a new terminology for describing the radiation tolerance of ICs and could form the basis of a "league table", used to assess the performance of "hardening laboratories" around the world.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 1997 |
| Pages: | 183-190 |
| Proceedings: | 3. European conference on radiation and its effects on components and systems |
| ISBN: | 0780330935 and 9780780330931 |
| Types: | Conference paper |
| DOI: | 10.1109/RADECS.1995.509775 |
Annealing CMOS device CMOS integrated circuits CMOS technology Circuit testing IC Logic testing MOS devices Predictive models Radiation hardening Semiconductor device modeling Terminology Threshold voltage corridor-like region four-lane model growth curve hardening high-dose range integrated circuit modelling lane-like region radiation hardening (electronics) radiation tolerance threshold voltage
