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1 Conference paper

Interwell Radiative Recombination in the Presence of Random Potential Fluctuations in GaAs/AlGaAs Biased Double Quantum Wells

Timofeev, V.B.; Larionov, A.V.; Ioselevich, A.S.; Zeman, J.; Martinez, G.; Falko, V.I.; et al. (2 more)

Proceedings of the 24th International Conference on the Physics of Semiconductors — 1999

The interwell luminescence (PL) of spatially separated e-h pairs exhibits systematic narrowing with temperature increase which are explained in terms of lateral thermo-activated tunneling of e-h pairs localized by random potential fluctuations (RPF). At critical temperatures the quasi-equilibrium

Year: 1999

Language: English

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2 Journal article

Interwell radiative recombination in the presence of random potential fluctuations in GaAs/AlGaAs biased double quantum wells

Timofeev, V.B.; Larionov, A.V.; Ioselevich, A.S.; Zeman, J.; Martinez, G.; Hvam, Jørn Märcher; et al. (1 more)

J E T P Letters — 1998, Volume 67, Issue 8, pp. 613-620

The interwell radiative recombination from biased double quantum wells (DQW) in pin GaAs/AlGaAs heterostructures is investigated at different temperatures and external electrical fields. The luminescence line of interwell recombination of spatially separated electron-hole pairs exhibits systematic

Year: 1998

Language: English

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