Journal article
Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
Institut für Halbleitertechnik1
Solid State Physics/the Nanometer Structure Consortium2
Institute for Nanoelectronics3
Department of Energy Conversion and Storage4
Faculty of Chemistry5
Braunschweig, Germany6
Polymer and Materials Chemistry7
We have investigated the electronic transport through 3 μm long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I–V characteristic with significantly increased currents of up to 1 μA at 1 V bias, for a back-gate voltage of 3 V.
As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.
Language: | English |
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Publisher: | American Chemical Society |
Year: | 2013 |
Pages: | 4111-4118 |
ISSN: | 1936086x and 19360851 |
Types: | Journal article |
DOI: | 10.1021/nn400380g |