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Journal article

Mapping the broadband polarization properties of linear 2D SOI photonic crystal waveguides

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Department of Photonics Engineering, Technical University of Denmark1

Risø National Laboratory for Sustainable Energy, Technical University of Denmark2

Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark3

Nanophotonics, Department of Photonics Engineering, Technical University of Denmark4

Both quasi-TE and TM polarisation spectra for a silicon- on-insulator (SOI) waveguide are recorded over (1100-1700) nm using a broadband supercontinuum source. By studying both the input and output polarisation eigenstates we observe narrowband resonant cross coupling near the lowest quasi-TE mode cut-off.

We also observe relatively broadband mixing between the two eigenstates to generate a complete photonic bandgap. By careful analysis of the output polarisation state we report on an inherent non-reciprocity between quasi TE and TM fundamental mode cross coupling. The nature of polarisation distinction in such bandgap structures is discussed in the context of polarisation scattering at an interface. (c) 2007 Optical Society of America.

Language: English
Year: 2007
Pages: 15603-15614
ISSN: 10944087
Types: Journal article
DOI: 10.1364/OE.15.015603
ORCIDs: Frandsen, Lars Hagedorn and Lavrinenko, Andrei

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