Journal article
Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay fully strained after 30 min anneal in N-2 at 500 degrees C.; Ge-Sn interdiffusion is seen at 500 degrees C but not at lower temperature.
B is 100% active in the in-situ GeSn:B layers up to a concentration of 1.7 x 10(19) cm(-3). GeSn:B provides slightly lower Hall hole mobility values than in pure p-type Ge especially for low B concentrations. (C) 2011 American Institute of Physics [doi.10.1063/1.3645620]
Language: | English |
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Publisher: | American Institute of Physics |
Year: | 2011 |
Pages: | 152103 |
ISSN: | 10773118 and 00036951 |
Types: | Journal article |
DOI: | 10.1063/1.3645620 |
ORCIDs: | Petersen, Dirch Hjorth and Hansen, Ole |