Conference paper
Large-signal PIN diode model for ultra-fast photodetectors
A large-signal model for PIN photodetector is presented, which can be applied to ultra-fast photodetection and THz signal generation. The model takes into account the tunnelling and avalanche breakdown, which is important for avalanche photodiodes. The model is applied to ultra-fast superlattice photodiodes for THz signal generation.
Results show that the output power at THz frequencies is in the order of tens of μW. The embedding impedances are found to be as low as 13Ω.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2005 |
| Pages: | 4 pp. |
| Proceedings: | 35th European Microwave Conference |
| ISBN: | 2960055128 and 9782960055122 |
| Types: | Conference paper |
| DOI: | 10.1109/EUMC.2005.1610152 |
Avalanche photodiodes Charge carrier processes Circuit simulation Equations Frequency Impedance PIN photodetector PIN photodiodes Photodetectors Signal generators Superlattices THz signal generation avalanche breakdown avalanche photodiodes embedding impedances large-signal PIN diode model p-i-n photodiodes photodetectors semiconductor device models semiconductor superlattices tunnelling ultra-fast photodetection ultra-fast photodetectors ultra-fast superlattice photodiodes
