Conference paper
Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars
Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure.
Language: | English |
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Year: | 2014 |
Proceedings: | Solid-State and Organic Lighting |
Types: | Conference paper |
ORCIDs: | Fadil, Ahmed , Ou, Yiyu and Ou, Haiyan |