Journal article
Collective Behavior of Interwell Excitons in GaAs/AlGaAs Double Quantum Wells
Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell excition in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circular polarized light, the luminescence line of interwell excitions exhibits a significant narrowing and a drastic increase in the degree of circular polarization of photoluminescence with increasing exciton concentration.
It is found that the radiative recombination rate significantly increases under these conditions. This phenomenon is observed at temperatures lower than the critical point and can be interpreted in terms of the collective behavior of interwell excitions.
Language: | English |
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Publisher: | Nauka/Interperiodica |
Year: | 2000 |
Pages: | 117-122 |
ISSN: | 10906487 and 00213640 |
Types: | Journal article |
DOI: | 10.1134/1.568294 |
ORCIDs: | Hvam, Jørn Märcher |