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Conference paper

4 Gb/s two-level to 2 symbol/s four-level converter GaAs IC for semiconductor optical amplifier modulators

In Proceedings of the 15th Annual Gallium Arsenide Integrated Circuit — 1993, pp. 299-301
From

Technical University of Denmark1

Department of Photonics Engineering, Technical University of Denmark2

Department of Electromagnetic Systems, Technical University of Denmark3

A design of a 50 Ω impedance matched two-to-four level converter GaAs IC for two-electrode semiconductor optical amplifier modulators is presented. Eye diagrams with good eye openings and 0.33 V spacing between adjacent logic levels are demonstrated for input bit rates up to 4 Gb/s. A novel differential super buffer output driver is applied and output reflection coefficients |S22| of less than -12 dB for frequencies less than 10 GHz are obtained

Language: English
Publisher: IEEE
Year: 1993
Pages: 299-301
Proceedings: 15th Annual Gallium Arsenide Integrated Circuit Symposium
ISBN: 0780313933 and 9780780313934
Types: Conference paper
DOI: 10.1109/GAAS.1993.394447

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