Journal article
Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part II: Dynamic Parasitic Parameters
Parasitic components in eGaN-FETs impact the dynamic performance of switching stages. The capacitances seen, primarily on the output characteristics, of these devices are a main contributor towards switching losses and therefor converter efficiency. Additionally, the threshold voltage of the device has an impact towards the switching speed and therefore the efficiency of a power stage.
This study shows the impact of extreme temperatures towards the parasitics that impact the switching behaviour of a power stage. A literature research is conducted exploring the various mechanisms and temperature dependancies, which are then related towards transient operations of eGaN-FETs. A device was chosen to perform measurements on output-, reverse transfer capacitance and threshold voltage while increasing temperature from 100 ◦C op to 225 ◦C.
The presented results show a large impact of temperature in these parasisic elements that show that high temperature switch-mode power converters need additional design work to ensure switching performance and lifetime.
Language: | English |
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Year: | 2021 |
Pages: | 000053-000057 |
ISSN: | 23804491 |
Types: | Journal article |
DOI: | 10.4071/2380-4491.2021.HiTEC.000053 |
ORCIDs: | Duraij, Martijn S. , Xiao, Yudi , Zsurzsan, Gabriel and Zang, Zhe |