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Conference paper

Single and double side textured black silicon require different annealing conditions for optimal passivation with ALD Al2O3

In 2018 Ieee 7th World Conference on Photovoltaic Energy Conversion (wcpec) (a Joint Conference of 45th Ieee Pvsc, 28th Pvsec and 34th Eu Pvsec) — 2018, pp. 3105-3107
From

Department of Micro- and Nanotechnology, Technical University of Denmark1

Silicon Microtechnology, Department of Micro- and Nanotechnology, Technical University of Denmark2

Black silicon is an attractive surface for solar cells thanks to its intrinsic antireflective properties, however progress in surface passivation is required to exploit its full potential. Here, we present effective minority carrier lifetime measurements on single side textured, double side textured, and flat reference Si surfaces, passivated by AI2O3 with subsequent thermal activation.

Effective lifetime measurements revealed that the annealing time resulting in highest effective lifetime, and therefore in the lowest surface recombination velocity of the textured surface, is depending on whether the wafers are single or double side textured. It follows that optimization of passivation of black silicon lifetime samples needs to be carried out on samples with texturing on one or both sides, depending on the solar cell architecture of interest.

Language: English
Publisher: IEEE
Year: 2018
Pages: 3105-3107
Proceedings: 7th World Conference on Photovoltaic Energy Conversion
ISBN: 1538685299 , 1538685302 , 9781538685297 and 9781538685303
Types: Conference paper
DOI: 10.1109/PVSC.2018.8547760
ORCIDs: Iandolo, Beniamino , Davidsen, Rasmus Schmidt and Hansen, Ole

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