First-principles electron transport with phonon coupling: Large scale at low cost

Phonon-assisted tunneling plays a crucial role for electronic device performance and even more so with future size down-scaling. We show how one can include this effect in large-scale first-principles calculations using a single "special thermal displacement" (STD) of the atomic coordinates at almost the same cost as elastic transport calculations, by extending the recent method of Zacharias et al. [Phys.

Rev. B 94, 075125 (2016)] to the important case of Landauer conductance. We apply the method to ultrascaled silicon devices and demonstrate the importance of phonon-assisted band-to-band and source-to-drain tunneling. In a diode the phonons lead to a rectification ratio suppression in good agreement with experiments, while in an ultrathin body transistor the phonons increase off currents by four orders of magnitude, and the subthreshold swing by a factor of 4, in agreement with perturbation theory.