Journal article
Improvement of the dose uniformity in plasma immersed ion implantation by introducing a vertical biased ring
Nagoya University, Department of Electrical Engineering and Computer Science, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
It is shown that the sheath evolving to a negatively biased wafer during the plasma immersed ion implantation focuses the positive ions to distinct regions on the surface resulting in a poor uniformity of the ion dose. The focusing mechanism is investigated and solutions to improve the ion dose uniformity are proposed based on three-dimensional calculations of the potential distribution and ion trajectories within the sheath structure.
Simulations are confirmed at lower scale in a DC Ar plasma which allows an easier visualization of the focusing phenomenon simultaneously with the measurement of the involved currents.
Language: | English |
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Year: | 2005 |
Pages: | 571-574 |
ISSN: | 18792731 and 00406090 |
Types: | Journal article |
DOI: | 10.1016/j.tsf.2005.08.055 |