Journal article ยท Preprint article
STM-Induced Hydrogen Desorption via a Hole Resonance
We report STM-induced desorption of H from Si(100)-H(2 X 1) at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at -7 V. The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H 5 sigma hole resonance.
The dependence of desorption rate on current and bias is analyzed using a novel approach for calculating inelastic scattering, which includes the effect of the electric field between tip and sample. We show that the maximum desorption rate at -7 V is due to a maximum fraction of inelastically scattered electrons at the onset of the field emission regime.
Language: | English |
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Year: | 1998 |
Pages: | 2618-2621 |
ISSN: | 10797114 and 00319007 |
Types: | Journal article and Preprint article |
DOI: | 10.1103/PhysRevLett.80.2618 |