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Journal article

Effect of gain nonlinearity in semiconductor lasers

By Jensen, Niels H.1; Christiansen, Peter Leth2; Skovgaard, Ove3,4

From

Technical University of Denmark1

Department of Informatics and Mathematical Modeling, Technical University of Denmark2

Applied functional analysis, Department of Mathematics, Technical University of Denmark3

Department of Mathematics, Technical University of Denmark4

Semiconductor lasers are modeled by single-mode rate equations with Langevin noise terms and the influence of nonlinear gain is investigated. For cw operation the probability distribution for the carrier number and the photon number in the laser cavity is obtained. The corresponding (2+1)-dimensional Fokker-Planck equation is derived and integrated on an Amdahl VP1100 vector processor.

Above threshold the resulting probability density agrees with the rate-equation predictions. The case of high-speed modulation is also considered. The nonlinear gain is found to stabilize the laser.

Language: English
Year: 1988
Pages: 8219-8225
ISSN: 1550235x , 10980121 , 24699950 , 10953795 and 01631829
Types: Journal article
DOI: 10.1103/PhysRevB.38.8219
ORCIDs: Christiansen, Peter Leth

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