Journal article
Transition between dynamic regimes in the sputter ablation of Ge(001)
We have studied the dynamic behavior of the Ge(001) surface during sputtering using in situ, real-time synchrotron X-ray diffraction. Two dynamic regimes were found which are characterized by kinetic roughening exponents β of 0.1 and 0.4, respectively. We observed an abrupt transition of the system between these two dynamic regimes both as a function of temperature and ion current.
From the boundary between the regimes we derive an activation energy of the relevant diffusion process of 1.1 eV.
Language: | English |
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Year: | 1997 |
Pages: | 447-452 |
ISSN: | 12864854 and 02955075 |
Types: | Journal article |
DOI: | 10.1209/epl/i1997-00266-0 |