Journal article
Strain in nanoscale Germanium hut clusters on Si(001) studied by x-ray diffraction
Scanning tunneling microscopy and synchrotron x-ray diffraction have been used to investigate nanoscale Ge hut clusters on Si(001). We have been able to identify the contributions to the scattered x-ray intensity which arise solely from the hut clusters and have shown that x-ray diffraction can be very sensitive to the strain field in the hut clusters.
At the Ge/Si interface the Ge clusters are almost fully strained with a misfit of only 0.5% but towards the apex of the clusters the strain is relaxed and the atomic spacing is close to the natural Ge lattice spacing with a 4.2% misfit.
Language: | English |
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Year: | 1996 |
Pages: | 2009-2012 |
ISSN: | 10797114 and 00319007 |
Types: | Journal article |
DOI: | 10.1103/PhysRevLett.77.2009 |