Conference paper
Limitations in THz Power Generation with Schottky Diode Varactor Frequency Multipliers
We discuss the limitations in power generation with Schottky diode and HBV (heterostructure barrier varactor) diode frequency multipliers. It is shown that at lower frequencies the experimental results achieved so far approach the theoretical limit of operation for the employed devices. However, at increasing frequencies the power drops with f-3 instead of the f-2 predicted by theory.
In this contribution we provide an overview of state-of-the-art results. A comparison with theoretically achievable multiplier performance reveals that the devices employed at higher frequencies are operating inefficiently and the design and fabrication capabilities have not reached the maturity encountered at lower THz frequencies.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2002 |
| Pages: | 109,110,111,112 |
| Proceedings: | 10th IEEE International Conference on Terahertz Electronics |
| ISBN: | 0780376307 and 9780780376304 |
| Types: | Conference paper |
| DOI: | 10.1109/THZ.2002.1037603 |
Circuit optimization Circuit simulation Design optimization Doping Fabrication Frequency HBV diodes Power generation Schottky diode varactor frequency multipliers Schottky diodes Submillimeter wave devices THz power generation limitations Varactors circuit simulation converters device design/fabrication capabilities device theoretical operation limit frequency conversion frequency multipliers heterostructure barrier varactors increased frequency power drop inefficient high frequency operation semiconductor device models submillimeter wave circuits submillimeter wave devices submillimetre wave circuits submillimetre wave diodes theoretically achievable multiplier performance varactors
