Journal article · Conference paper
Germanium arsenide nanosheets applied as twodimensional field emitters
In
Journal of Physics: Conference Series
—
2021, Volume 2047, Issue 1, pp. 012021
Abstract
The IV-V groups binary compound germanium arsenide (GeAs) is a semiconductor that can be easily exfoliated in very thin nanosheets and is characterized by a band gap ranging from 0.6 eV (bulk form) up to 2.1 eV (monolayer). We investigate the field emission characteristics of exfoliated multilayer GeAs nanosheets by means of a tip-anode setup, where a nanomanipulated W-tip is positioned in front of the GeAs emitting layer at nanometric distance, all controlled inside a scanning electron microscope.
We demonstrate that GeAs multilayers are suitable to develop electron sources, with turn-on field of the order of 102Vμm-1, and field enhancement factor of about 70.
| Language: | English |
|---|---|
| Publisher: | IOP Publishing |
| Year: | 2021 |
| Pages: | 012021 |
| Proceedings: | 4th International Conference on Material Strength and Applied Mechanics |
| ISSN: | 17426596 and 17426588 |
| Types: | Journal article and Conference paper |
| DOI: | 10.1088/1742-6596/2047/1/012021 |
